STD5N60DM2 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STD5N60DM2

Description	N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 15 page

STD5N60DM2

Electrical ratings

DocID029525 Rev 1

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

Drain current (continuous) at Tcase = 25 °C

3.5

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 3.5 A, di/dt=400 A/μs; VDS peak < V(BR)DSS, VDD = 480 V.

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.78

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

Notes:

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

1.7

EAS(2)

Single pulse avalanche energy

132

Notes:

(1) Pulse width limited by Tjmax.

(2) Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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