FLASH

AS29F010

Micross Components reserves the right to change products or specifications without notice.

6

AS29F010

Rev. 2.6 11/10

power-down. The command register and all internal program/

erase circuits are disabled, and the device resets. Subsequent

writes are ignored until V

must provide the proper signals to the control pins to prevent

unintentional writes when V

Write Pulse “Glitch” Protection

Noise pulses of less than 5ns (typical) on OE\, CE\, or WE\

do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE\ =

V

and WE\ must be a logical zero while OE\ is a logical one.

Power-Up Write Inhibit

If WE\ = CE\ = V

device does not accept commands on the rising edge of WE\.

The internal state machine is automatically reset to reading

array data on power-up.

COMMAND DEFINITIONS

Writing specific address and data commands or sequences

into the command register initiates device operations. The

Command Definitions table defines the valid register com-

mand sequences. Writing incorrect address and data values

or

writing them in the improper sequence resets the device

to reading array data.

All addresses are latched on the falling edge of WE\ or

CE\, whichever happens first. Refer to the appropriate timing

diagrams in the “AC Characteristics” section.

TABLE 3: Autoselect Codes (High Voltage Method)

DESCRIPTION

CE\

OE\

WE\

A16 to

A14

A13 to

A10

A9

A8

to

A7

A6

A5

to

A2

A1

A0

DQ7 to DQ0

Manufacturer ID

L

L

H

X

X

XL

XL

L

01h

Device ID

L

L

H

X

X

XL

XL

H

20h

01h

(protected)

00h

(unprotected)

LX

H

L

SA

X

X

Sector Protection

Verification

LL

H

Reading Array Data

The device is automatically set to reading array data after

device power-up. No commands are required to retrieve data.

The device is also ready to read array data after completing an

Embedded Program or Embedded Erase algorithm.

The system must issue the reset command to re-enable the

device for reading array data if DQ5 goes high, or while in the

autoselect mode. See the “Reset Command” section, next.

See also “Requirements for Reading Array Data” in the

“Device Bus Operations” section for more information. The

Read Operations table provides the read parameters, and the

Read Operation Timings diagram shows the timing diagram.

Reset Command

Writing the reset command to the device resets the device to

reading array data. Address bits are don’t care for this

com-

mand.

The reset command may be written between the sequence

cycles in an erase command sequence before erasing begins.

This resets the device to reading array data. Once erasure

begins, however, the device ignores reset commands until the

operation is complete.

The reset command may be written between the sequence

cycles in a program command sequence before programming

begins. This resets the device to reading array data. Once

programming begins, however, the device ignores reset com-

mands until the operation is complete.

The reset command may be written between the sequence

cycles in an autoselect command sequence. Once in the au-

toselect mode, the reset command must be written to return to

reading array data.

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to reading array

data.