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2SD1481 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1481 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1481 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)* Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA 1.5 V VBE(sat)* Base-Emitter Saturation Voltage IC= 1A, IB= 1mA 2.0 V ICBO Collector Cutoff Current VCB= 40V, IE= 0 1 uA hFE-1* DC Current Gain IC= 1A; VCE= 2V 2000 20000 hFE-2* DC Current Gain IC= 3A; VCE= 2V 500 *:Pulse test PW≤350us,duty cycle≤2% Switching Times ton Turn-on Time IC= 1A; IB1= IB2= 1mA 0.5 μ s ts Storage Time 2.0 μ s tf Fall Time 1.0 μ s hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 |
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