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2SD1481 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD1481
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1481 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1481
DESCRIPTION
·
On-chip C-to-B Zener diode for surge voltage absorption
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1A
·
High DC Current Gain
: hFE= 2000(Min) @IC= 1A
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low-frequency amplifiers and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
4
A
IB
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
@ TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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