Zero Bias Detector Diode

Rev. V1

MZB600

1

1

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DC-0014119

1

Parameter

Test Conditions

Unit

Min.

Typ.

Max.

V

3

—

—

mV

—

—

300

Ω

—

3500

—

pF

—

0.2

—

Features

 Very Low Forward Voltage: 300 mV max. @ 1 mA

 Low Tangential Signal Sensitivity: -42 dBm

 Low Junction Capacitance: 0.2 pF

 High Breakdown Voltage: 3 V

 Available in Beam Lead, Multi-Junction Chip or

Packaged

 RoHS* Compliant

Description

The MZB600 zero bias detector (ZBD) diode is a

sensitive, very low barrier height Schottky diode

designed for use in high frequency, low input power

detectors. Its very low barrier height results in

excellent sensitivity to very small signals without the

need for external bias current. This diode is available

as a five-junction common-anode chip, as a single-

junction beam lead or packaged in one of several

suitable packages. It is manufactured using a proven

diode fabrication process which optimizes diode

characteristics for optimal electrical performance and

excellent reliability.

The low junction capacitance (0.2 pF typical) enables

the device to be used in sensitive detector circuits

with input signals up to 20 GHz.

This rugged device is capable of reliable operation in

all military, commercial and industrial applications.

Part Number

Package

MZB600-C15P-W

chip (400 pc. waffle pack)

MZB600-B11-GP

beam lead (100 pc. GelPak™)

MZB600-19-6-W

CS19-6 (100 pc. waffle pack)

MZB600-19-6-R

CS19-6 (3000 pc. Reel)

MZB600-32-W

CS32 (100 pc. waffle pack)

1. Contact the factory for other packaging options.