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AM29LV800T Datasheet(PDF) 23 Page - Advanced Micro Devices |
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AM29LV800T Datasheet(HTML) 23 Page - Advanced Micro Devices |
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23 / 48 page ![]() Am29LV800T/Am29LV800B 23 PRELIMINARY Data Protection The Am29LV800 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transi- tions. During power-up, the device automatically resets the internal state machine to the read mode. Also, with its control register architecture, alteration of the mem- ory contents only occurs after successful completion of the command sequences. The Am29LV800 incorporates several features to pre- vent inadver tent write cycles resulting from VCC power-up and power-down transitions or system noise. Low VCC Write Inhibit To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than VLKO (lock-out voltage). If VCC < VLKO, the command register is disabled and all internal program/ erase circuits are disabled. Under this condition, the device will reset to read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. It is the user’s responsibility to ensure that the control levels are logically correct when VCC is above VLKO (unless the RESET pin is asserted). Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not change the command registers. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write, CE and WE must be logical zero while OE is a logical one. Power-Up Write Inhibit Power up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to read mode on power up. |
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