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AM29LV800T Datasheet(PDF) 23 Page - Advanced Micro Devices

Part # AM29LV800T
Description  8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
PDF  48 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV800T Datasheet(HTML) 23 Page - Advanced Micro Devices

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Am29LV800T/Am29LV800B
23
PRELIMINARY
Data Protection
The Am29LV800 is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transi-
tions. During power-up, the device automatically resets
the internal state machine to the read mode. Also, with
its control register architecture, alteration of the mem-
ory contents only occurs after successful completion of
the command sequences.
The Am29LV800 incorporates several features to pre-
vent inadver tent write cycles resulting from VCC
power-up and power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up
and power-down, a write cycle is locked out for VCC
less than VLKO (lock-out voltage). If VCC < VLKO, the
command register is disabled and all internal program/
erase circuits are disabled. Under this condition, the
device will reset to read mode. Subsequent writes will
be ignored until the VCC level is greater than VLKO. It is
the user’s responsibility to ensure that the control levels
are logically correct when VCC is above VLKO (unless
the RESET pin is asserted).
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or
WE will not change the command registers.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE
= VIH, or WE = VIH. To initiate a write, CE and WE must
be logical zero while OE is a logical one.
Power-Up Write Inhibit
Power up of the device with WE = CE = VIL and OE =
VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to
read mode on power up.



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