AS4C32M16SB-7TCN datasheet(21/55 Pages) ALSC

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Table 16. Electrical Characteristics and Recommended A.C. Operating Conditions

(VDD = 3.3V ± 0.3V, TA = -40~85°C) (Note: 5, 6, 7, 8)

Symbol

A.C. Parameter

-6

-7

Unit Note

Min. Max. Min. Max.

tRC

Row cycle time (same bank)

tRFC

Refresh cycle time

tRCD

RAS# to CAS# delay (same bank)

tRP

Precharge to refresh/row activate command

(same bank)

tRRD

Row activate to row activate delay

(different banks)

tMRD

Mode register set cycle time

tRAS

Row activate to precharge time (same bank)

120K

tWR

Write recovery time

tCK

Clock cycle time

CL* = 2

CL* = 3

tCH

Clock high time

2.5

tCL

Clock low time

2.5

tAC

Access time from CLK

(positive edge)

CL* = 2

CL* = 3

5.4

tOH

Data output hold time

2.5

tLZ

Data output low impedance

tHZ

Data output high impedance

5.4

tIS

Data/Address/Control Input set-up time

1.5

tIH

Data/Address/Control Input hold time

0.8

tPDE

Power Down Exit set-up time

tIS+tCK

tREFI

Average Refresh interval time

7.8

μs

tXSR

Exit Self-Refresh to any Command

tRC+tIS

CL is CAS Latency.

Note:

1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. Absolute maximum DC requirements contain stress ratings only. Functional operation at the

absolute maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect

device reliability.

2. All voltages are referenced to VSS. Overshoot VIH (Max) = 4.6V for pulse width ≤ 3ns. Undershoot VIL (Min) = -1.0V

for pulse width ≤ 3ns.

3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the

minimum value of tCK and tRC. Input signals are changed one time during every 2 tCK.

4. These parameters depend on the output loading. Specified values are obtained with the output open.

5. Power-up sequence is described in Note 11.

6. A.C. Test Conditions

AS4C32M16SB-6TIN

AS4C32M16SB-7TIN

AS4C32M16SB-7TCN

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Rev.1.0 June 2016

AS4C32M16SB-7TCN Datasheet(PDF) 21 Page - Alliance Semiconductor Corporation

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