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STB33N60M2 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STB33N60M2
Description  N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB33N60M2 Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STB33N60M2
6/15
DocID025253 Rev 2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
ID
10
1
0.1
1
100
VDS(V)
10
(A)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
100
AM17906v1
ID
50
30
10
0
0
5
VDS(V)
10
(A)
15
4V
5V
VGS=7, 8, 9, 10V
20
40
60
6V
20
AM17907v1
ID
60
40
20
0
0
4
VGS(V)
8
(A)
2
6
10
10
30
50
VDS=17V
AM17908v1
VGS
6
4
2
0
0
20
Qg(nC)
(V)
8
30
40
10
VDD=480V
ID=26A
12
300
200
100
0
400
500
VDS
10
50
VDS
(V)
AM17909v1
RDS(on)
0.108
0.106
0.104
0
10
ID(A)
(
Ω)
5
15
0.110
VGS=10V
20
25
0.112
0.114
AM17910v1



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