STB33N60M2 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STB33N60M2

Description	N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 15 page

DocID025253 Rev 2

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STB33N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

1. Pulse width limited by safe operating area.

Drain current (pulsed)

104

PTOT

Total dissipation at TC = 25 °C

190

dv/dt (2)

2. ISD ≤ 26 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(3)

3. VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-ambient pcb max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj=25°C,

ID= IAR; VDD=50)

2300

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