STF28NM60ND datasheet(3/22 Pages) STMICROELECTRONICS

3 / 22 page

DocID024520 Rev 3

3/22

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK, TO-220,

TO-247

TO-220FP

Drain-source voltage

600

Gate-source voltage

±25

Drain current (continuous) at T

= 25 °C

(1)

Limited by maximum junction temperature

Drain current (continuous) at T

= 100 °C

14.5

(1)

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

92(1)

TOT

Total dissipation at T

= 25 °C

190

dv/dt

(3)

≤ 23 A, di/dt ≤ 600 A/μs, V

= 80% V

(BR)DSS

Peak diode recovery voltage slope

V/ns

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; T

=25 °C)

2500

stg

Storage temperature

–55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

D²PAK TO-220FP TO-220 TO-247

Unit

thj-case

Thermal resistance junction-case max

0.66

3.6

0.66

°C/W

thj-amb

Thermal resistance junction-ambient max

62.5

°C/W

thj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

Avalanche current, repetitive or not-

repetitive (pulse width limited by T

max)

Single pulse avalanche energy

(starting T

= 25 °C, I

= I

, V

= 50 V)

450

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