Electrical characteristics

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND

4/22

DocID024520 Rev 3

2

Electrical characteristics

(T

CASE

=25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

600

V

dv/dt

(1)

1.

Characteristic value at turn off on inductive load.

Drain source voltage slope

V

DD

= 480 V, I

D

= 23 A,

V

GS

= 10 V

45

V/ns

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 600 V

1

μA

V

DS

= 600 V, T

C

= 125 °C

100

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 20 V

±100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA3

4

5

V

R

DS(on)

Static drain-source on

resistance

V

GS

= 10 V, I

D

= 11.5 A

0.13

0.15

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-

2090

-

pF

C

oss

Output capacitance

-

90

-

pF

C

rss

Reverse transfer

capacitance

-5.5

-

pF

C

oss eq.

(1)

1.

C

oss eq

. is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

GS

= 0, V

DS

= 0 to 480 V

-

312

-

pF

t

d(on)

Turn-on delay time

V

DD

= 300 V, I

D

= 11.5 A

R

G

=4.7

Ω V

GS

= 10 V

(see Figure 18),

(see Figure 20)

-23.5

-

ns

t

r

Rise time

-

21.5

-

ns

t

d(off)

Turn-off delay time

-

92

-

ns

t

f

Fall time

-

27

-

ns

Q

g

Total gate charge

V

DD

= 480 V, I

D

= 23 A,

V

GS

= 10 V,

(see Figure 10)

-62.5

-

nC

Q

gs

Gate-source charge

-

11

-

nC

Q

gd

Gate-drain charge

-

38

-

nC

R

g

Gate input resistance

f = 1 MHz,

test signal level = 20 mV,

I

D

= 0

-4.7

-

Ω