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STE88N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STE88N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() DocID025974 Rev 1 7/14 STE88N65M5 Electrical characteristics 14 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Output capacitance stored energy VGS 6 4 2 0 0 50 Qg(nC) (V) 200 8 100 150 10 VDD=520V ID=42A 12 300 200 100 0 400 500 VDS VDS (V) 14 AM10395v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss 100000 AM10397v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID= 250µA AM08899v1 RDS(on) 1.7 1.5 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 ID= 42 A VGS= 10 V AM05501v2 VSD 0 20 ISD(A) (V) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ=-50°C TJ=150°C TJ=25°C AM04974v1 Eoss 15 10 5 0 0 100 VDS(V) (µJ) 400 20 200 300 25 30 500 600 35 40 AM10398v1 |
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