STE88N65M5 datasheet(3/14 Pages) STMICROELECTRONICS

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STE88N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate- source voltage

± 25

Drain current (continuous) at T

= 25 °C

Drain current (continuous) at T

= 100 °C

55.7

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

352

TOT

Total dissipation at T

= 25 °C

494

Max current during repetitive or single pulse avalanche

(pulse width limited by T

JMAX

)

Single pulse avalanche energy

(starting T

= 25°C, I

= I

, V

= 50V)

2000

dv/dt

(2)

≤ 88 A, di/dt = 400 A/μs, V

= 400 V, V

DS (peak)

< V

(BR)DSS.

Peak diode recovery voltage slope

V/ns

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max

0.253

°C/W

thj-amb

Thermal resistance junction-ambient max

°C/W

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