STF12N120K5 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

DocID026396 Rev 2

3/16

STF12N120K5, STFW12N120K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

VGS

Gate-source voltage

± 30

Drain current at TC = 25 °C

Drain current at TC = 100 °C

7.6

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s, TC = 25 °C)

2500

3500

IAR

(2)

Pulse width limited by TJmax.

Max current during repetitive or single

pulse avalanche

EAS

(3)

Starting TJ = 25 °C, ID=IAS, VDD= 50 V

Single pulse avalanche energy

215

dv/dt (4)

ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (5)

VDS ≤ 960 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

Rthj-case

Thermal resistance junction-case max

3.1

1.98

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

STF12N120K5 Datasheet(PDF) 3 Page - STMicroelectronics

STF12N120K5 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL