STF12N120K5 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STF12N120K5, STFW12N120K5

4/16

DocID026396 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage, (VGS= 0)

ID = 1 mA

1200

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 1200 V

µA

VDS = 1200 V, Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID= 6 A

0.62

0.69

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-1370

Coss

Output capacitance

110

Crss

Reverse transfer

capacitance

-0.6

Co(tr)

(1)

Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance,

time-related

VGS = 0, VDS = 0 to 960 V

-128

Co(er)

(2)

Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance,

energy-related

-42

Intrinsic gate resistance

f = 1 MHz, ID = 0

3.5

Ω

Total gate charge

VDD = 960 V, ID = 6 A

VGS =10 V

(see Figure 18)

44.2

Qgs

Gate-source charge

7.3

Qgd

Gate-drain charge

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