STFI13NK60Z datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STFI13NK60Z

4/13

Doc ID 018969 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V,

VDS = 600 V, Tc=125 °C

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20 V

µA

VGS(th)

Gate threshold voltage

VDS= VGS , ID = 100 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 4.5 A

0.48

0.55

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS =8 V, ID = 5 A

-11

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

2030

210

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

125

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=480 V, ID = 10 A

VGS =10 V

(see Figure 16)

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