STL7N60M2

Electrical ratings

DocID027417 Rev 1

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

V

5

A

3.2

A

IDM

(1)

Drain current (pulsed)

20

A

ID

(2)

1.2

A

ID

(2)

0.8

A

IDM

(1)(2)

Drain current (pulsed)

4.8

A

67

W

(2)

4

W

dv/dt

(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

V/ns

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Notes:

(1)

Pulse width limited by safe operating area.

(2)

When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 10 s)

(3)

(4)

≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

0.83

°C/W

Thermal resistance junction-pcb max

31.3

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive (pulse width

1

A

80

mJ