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STL7N60M2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL7N60M2
Description  Extremely low gate charge
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL7N60M2 Datasheet(HTML) 5 Page - STMicroelectronics

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STL7N60M2
Electrical characteristics
DocID027417 Rev 1
5/13
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
5
A
ISDM
(1)
Source-drain current
(pulsed)
-
20
A
VSD
(2)
Forward on voltage
VGS = 0 V, ISD = 5 A
-
1.6
V
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 19:
"Switching time waveform")
-
275
ns
Qrr
Reverse recovery
charge
-
1.55
µC
IRRM
Reverse recovery
current
-
11
A
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 19: "Switching time
waveform")
-
376
ns
Qrr
Reverse recovery
charge
-
2.1
µC
IRRM
Reverse recovery
current
-
11
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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