STGWT20H60DF datasheet(8/17 Pages) STMICROELECTRONICS

Part #	STGWT20H60DF

Description	600 V, 20 A high speed trench gate field-stop IGBT

PDF	17 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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8 / 17 page

Electrical characteristics

STGW20H60DF, STGWT20H60DF

8/17

DocID024745 Rev 1

Figure 6. Collector current vs. case temperature

Figure 7. Collector current vs. frequency

Figure 8. VCE(sat) vs. junction temperature

Figure 9. VCE(sat) vs. collector current

Figure 10. Forward bias safe operating area

Figure 11. Thermal impedance

050

TC(°C)

100

(A)

125

AM16282v1

f(kHz)

(A)

Tc= 80°C

Rectangular current shape

(duty cycle= 0.5, VCC= 400 V

Rg = 10

Ω, VGE= 0/15V, TJ= 175°C

Tc= 100°C

AM162981V1

VCE(sat)

1.9

1.7

1.5

1.3

-75

TJ(°C)

125

(V)

-25

2.1

2.3

IC= 40 A

VGE= 15 V

IC= 20 A

IC= 10 A

AM16290V1

VCE(sat)

2.2

1.8

1.4

1.0

020

IC(A)

(V)

VGE= 15 V

TJ = 175 °C

TJ = -40 °C

TJ = 25 °C

AM16291V1

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

0.1

100

VCE(V)

(A)

1 ms

100 µs

AM16280V1

-5

-4

-3

-2

-1

tp(s)

-2

-1

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

Single pulse

δ=0.5

ZthTO2T_B

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