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STGWT20H60DF Datasheet(PDF) 4 Page - STMicroelectronics |
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STGWT20H60DF Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 17 page ![]() Electrical characteristics STGW20H60DF, STGWT20H60DF 4/17 DocID024745 Rev 1 2 Electrical characteristics T J = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 mA 600 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A 1.6 2.0 V V GE = 15 V, I C = 20 A T J = 125 °C 1.75 V GE = 15 V, I C = 20 A T J = 175 °C 1.8 V GE(th) Gate threshold voltage V CE = V GE , I C = 1 mA 5 6 7 V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μA I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance V CE = 25 V, f = 1 MHz, V GE = 0 -2750 - pF C oes Output capacitance - 110 - pF C res Reverse transfer capacitance -65 - pF Q g Total gate charge V CC = 400 V, I C = 20 A, V GE = 15 V -115 - nC Q ge Gate-emitter charge - 22 - nC Q gc Gate-collector charge - 45 - nC |
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