STGWT28IH125DF datasheet(7/17 Pages) STMICROELECTRONICS

Part #	STGWT28IH125DF

Description	1250 V, 30 A IH series trench gate field-stop IGBT

PDF	17 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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7 / 17 page

DocID025268 Rev 2

7/17

STGW28IH125DF, STGWT28IH125DF

Electrical characteristics

Figure 8. Forward bias safe operating area

Figure 9. Transfer characteristics

C = 25°C,

T ≤ 175 C; V

0.1

VCE(V)

(A)

10 μs

100 μs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

1 μs

100

1000

GIPG300120141043FSR

VGE(V)

(A)

TJ=175°C

TJ=25°C

VCE=10V

100

GIPG300120141054FSR

Figure 10. Diode VF vs. forward current

Figure 11. Normalized VGE(th) vs junction

temperature

1.2

1.0

0.8

0.6

IF(A)

(V)

TJ= 175°C

TJ= 25°C

TJ= -40°C

100

2.0

1.8

1.6

1.4

2.4

2.2

GIPG300120141110FSR

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

100

150

IC= 1mA

VCE= VGE

0.7

0.8

0.9

GIPD281020131600FSR

Figure 12. Normalized V(BR)CES vs. junction

temperature

Figure 13. Capacitance variation

V(BR)CES

1.08

1.0

0.9

-50

TJ(°C)

(norm)

100

150

IC= 2mA

GIPG300120141121FSR

VCE(V)

(pF)

0.1

Cies

100

Coes

Cres

100

1000

GIPG300120141124FSR

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