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STGW80H65DFB Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGW80H65DFB
Description  High speed switching series
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80H65DFB Datasheet(HTML) 1 Page - STMicroelectronics

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November 2016
DocID024366 Rev 8
1/18
This is information on a product in full production.
www.st.com
STGW80H65DFB,
STGWT80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
VCE(sat) = 1.6 V(typ) @ IC = 80 A
Safe paralleling
Tight parameter distribution
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters
High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGW80H65DFB
GW80H65DFB
TO-247
Tube
STGWT80H65DFB
GWT80H65DFB
TO-3P
Tube
1
2
3
TO-3P
TAB
TO-247
1
2
3


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