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STGW80H65DFB Datasheet(PDF) 5 Page - STMicroelectronics |
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STGW80H65DFB Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() STGW80H65DFB, STGWT80H65DFB Electrical characteristics DocID024366 Rev 8 5/18 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 28: " Test circuit for inductive load switching" ) - 84 - ns tr Current rise time - 52 - ns (di/dt)on Turn-on current slope - 1270 - A/µs td(off) Turn-off-delay time - 280 - ns tf Current fall time - 31 - ns Eon(1) Turn-on switching energy - 2.1 - mJ Eoff(2) Turn-off switching energy - 1.5 - mJ Ets Total switching energy - 3.6 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω , TJ = 175 °C (see Figure 28: " Test circuit for inductive load switching") - 77 - ns tr Current rise time - 51 - ns (di/dt)on Turn-on current slope - 1270 - A/µs td(off) Turn-off-delay time - 328 - ns tf Current fall time - 30 - ns Eon(1) Turn-on switching energy - 4.4 - mJ Eoff(2) Turn-off switching energy - 2.1 - mJ Ets Total switching energy - 6.5 - mJ Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 80 A, VR = 400 V, di/dt = 1000 A/µs VGE = 15 V, (see Figure 28: " Test circuit for inductive load switching") - 85 - ns Qrr Reverse recovery charge - 1105 - nC Irrm Reverse recovery current - 26 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 722 - A/µs Err Reverse recovery energy - 267 - µJ trr Reverse recovery time IF = 80 A, VR = 400 V, VGE = 15 V ,TJ = 175 °C di/dt = 1000 A/µs (see Figure 28: " Test circuit for inductive load switching") - 149 - ns Qrr Reverse recovery charge - 4920 - nC Irrm Reverse recovery current - 66 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 546 - A/µs Err Reverse recovery energy - 1172 - µJ |
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