L6235Q datasheet(7/33 Pages) STMICROELECTRONICS

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L6235Q

Electrical characteristics

Doc ID 018997 Rev 2

7/33

tRISE

Output rise time (2)

ILOAD =2.5 A, resistive load

250

tFALL

Output fall time (2)

ILOAD =2.5 A, resistive load

250

tDT

Dead time protection

0.5

µs

fCP

Charge pump frequency

Tj = -25 °C to 125 °C (7)

0.6

MHz

PWM comparator and monostable

IRCOFF

Source current at pin RCOFF

VRCOFF = 2.5 V

3.5

5.5

Voffset

Offset voltage on sense comparator

VREF = 0.5 V

±5

tPROP

Turn OFF propagation delay (3)

500

tBLANK

Internal blanking time on SENSE

comparator

1µs

tON(MIN)

Minimum ON time

1.5

µs

tOFF

PWM recirculation time

ROFF = 20 kΩ; COFF = 1 nF

µs

ROFF = 100 kΩ; COFF = 1 nF

µs

IBIAS

Input bias current at pins VREFA and

VREFB

µA

Tacho monostable

IRCPULSE

Source current at pin RCPULSE

VRCPULSE = 2.5 V

3.5

5.5

tPULSE

Monostable of time

RPUL = 20 kΩ; CPUL =1 nF

µs

RPUL = 100 kΩ; CPUL =1 nF

µs

RTACHO

Open drain ON resistance

Over current detection e protection

Isover

Supply overcurrent protection

threshold

-25 °C<Tj <125 °C

4.0

5.6

7.1

ROPDR

Open drain ON resistance

I = 4 mA

IOH

OCD high level leakage current

VDIAG = 5 V

µA

tOCD(ON)

OCD turn-on delay time (4)

I = 4 mA; CEN < 100 pF

200

tOCD(OFF)

OCD turn-off delay time (4)

I = 4 mA; CEN < 100 pF

100

Tested at 25 °C in a restricted range and guaranteed by characterization.

See Figure 3.

Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin VREF.

See Figure 4.

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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