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90N10F7 Datasheet(PDF) 3 Page - STMicroelectronics

Part # 90N10F7
Description  N-channel 100 V, 0.007 Ω typ., 70 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

90N10F7 Datasheet(HTML) 3 Page - STMicroelectronics

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STL90N10F7
Electrical ratings
DocID024551 Rev 4
3/14
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
ID
(1)
Drain current (continuous) at TC = 25 °C
70
A
ID
(1)
Drain current (continuous) at TC= 100 °C
50
A
ID
(2)
Drain current (continuous) at Tpcb = 25 °C
16
A
ID
(2)
Drain current (continuous) at Tpcb= 100 °C
11
A
IDM
(1)(3)
Drain current (pulsed)
280
A
IDM
(2)(3)
Drain current (pulsed)
64
A
PTOT
(1)
Total dissipation at TC = 25 °C
100
W
PTOT
(2)
Total dissipation at Tpcb = 25 °C
5
W
EAS
(4)
Single pulse avalanche energy
300
mJ
Tstg
Storage temperature
- 55 to 175
°C
Tj
Maximum junction temperature
175
°C
Notes:
(1)
This value is rated according to Rthj-c.
(2)
This value is rated according to Rthj-pcb.
(3)
Pulse width is limited by safe operating area.
(4)
Starting Tj = 25 °C, ID = 10 A, VDD = 50 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.5
°C/W
Rthj-pcb
(1)
Thermal resistance junction-pcb
31
Notes:
(1)
When mounted on 1 inch², 2 Oz. Cu FR-4 board



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