90N10F7 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STL90N10F7

4/14

DocID024551 Rev 4

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

100

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 100 V

µA

VGS = 0 V, VDS = 100 V,

Tc = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

3.5

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 8 A

0.007

0.008

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 50 V, f = 1 MHz,

VGS = 0 V

3100

4030

Coss

Output capacitance

700

910

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 50 V, ID = 16 A,

VGS = 10 V (see Figure 14:

"Gate charge test circuit")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 8 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Switching times

test circuit for resistive load"

and Figure 18: "Switching time

waveform")

Rise time

td(off)

Turn-off-delay time

Fall time

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