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STP165N10F4 Datasheet(PDF) 6 Page - STMicroelectronics |
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STP165N10F4 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Electrical characteristics STP165N10F4 6/12 Doc ID 15781 Rev 2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance ID 100 10 1 0.1 0.1 1 100 VDS(V) 10 (A) Oper ation in thi s are a i s Limited by m ax R D S (on) 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse AM08651v1 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/τ tp τ Single pulse δ=0.5 280tok ID 150 100 50 0 0 VDS(V) 3 (A) 1 2 4 200 250 5V 6V 7V VGS=10V 300 350 4V AM08652v1 ID 0 0 4 VGS(V) 8 (A) 2 6 VDS=2V 150 100 50 200 250 300 AM08653v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 ID=1mA 175 AM08654v1 RDS(on) 4.8 4.7 4.6 4.5 0 40 ID(A) (m Ω) 20 60 4.9 5.0 5.1 5.2 VGS=10V 100 80 120 5.3 AM08655v1 |
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