STP165N10F4 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STP165N10F4

Description	Very low on-resistance

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STP165N10F4

Electrical characteristics

Doc ID 15781 Rev 2

5/12

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 50 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

29.6

td(off)

Turn-off-delay time

Fall time

VDD = 50 V, ID = 60 A,

RG =4.7 Ω, VGS = 10 V

(see Figure 13)

154

106

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

120

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

-480

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 120 A, VGS = 0

1.4

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120 A,

VDD = 80 V

di/dt = 100 A/µs,

Tj = 150 °C (see Figure 15)

86.8

313

7.2

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