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STP240N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP240N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  This is information on a product in full production. July 2014 DocID023934 Rev 3 1/13 STP240N10F7 N-channel 100 V, 2.85 m Ω typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features • Ultra low on-resistance • 100% avalanche tested Applications • High current switching applications Description This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. TO-220 1 2 3 TAB Order code VDS RDS(on)max. ID STP240N10F7 100 V 3.2 m Ω 110 A Table 1. Device summary Order code Marking Package Packaging STP240N10F7 240N10F7 TO-220 Tube www.st.com |
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