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48N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # 48N60M2
Description  Extremely low gate charge
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

48N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

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January 2017
DocID026750 Rev 3
1/12
This is information on a product in full production.
www.st.com
STW48N60M2-4
N-
channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2
Power MOSFET in a TO247-4 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @ TJmax.
RDS(on)max.
ID
STW48N60M2-4
650 V
0.07 Ω
42 A
Excellent switching performance thanks to
the extra driving source pin
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
High efficiency switching applications:
Servers
PV inverters
Telecom infrastructure
Multi kW battery chargers
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW48N60M2-4
48N60M2
TO247-4
Tube


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