48N60M2 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW48N60M2-4

4/12

DocID026750 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero-gate voltage

drain current (VGS = 0)

VDS = 600 V

µA

VDS = 600 V, TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 21 A

0.06

0.07

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

3060

Coss

Output capacitance

143

Crss

Reverse transfer

capacitance

4.3

Coss eq.(1)

Equivalent Output

Capacitance

VGS = 0, VDS = 0 to 480 V

630

Intrinsic gate

resistance

f = 1 MHz open drain

4.6

Ω

Total gate charge

VDD = 480 V, ID = 42 A,

VGS = 10 V

See Figure 15: "Gate charge test

circuit"

Qgs

Gate-source charge

10.5

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 21 A,

= 4.7 Ω, VGS = 10 V

See Figure 14: "Switching times

test circuit for resistive load" and

Figure 19: "Switching time

waveform"

18.5

Rise time

td(off)

Turn-off-delay time

Fall time

119

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