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SRK2001ATR Datasheet(PDF) 12 Page - STMicroelectronics

Part # SRK2001ATR
Description  Auto-compensation of parasitic inductance
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SRK2001ATR Datasheet(HTML) 12 Page - STMicroelectronics

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Operation description
SRK2001A
12/20
DocID029495 Rev 1
7.3
Adaptive turn-off
The SR MOSFET turn-off may be triggered by two different mechanisms: by the adaptive
turn-off mechanism (two-slope turn-off) or by the ZCD_OFF comparator (fast turn-off, see
Section 7.4).
Due to the stray inductance in series with the SR MOSFET RDS(on) (mainly the package
stray inductance), the sensed drain-source signal is not really equal to the voltage drop
across the MOSFET RDS(on), but it anticipates the time instant where the current reaches
zero, causing a premature MOSFET turn-off.
To overcome this problem (without adding any stray inductance compensation circuit), the
device uses a turn-off mechanism based on an adaptive algorithm. This consists in turning
off the SR MOSFET with a certain delay after the sensed drain-source voltage has reached
zero and adapting progressively this delay in order to maximize the conduction period and
get the target residual conduction (Tdiode) of the MOSFET body diode after the turn-off.
Figure 8 shows this adaptive algorithm: cycle-by-cycle the conduction time is maximized
allowing in a steady-state the maximum converter efficiency.
Figure 8. Adaptive turn-off
After the turn-on, a blanking time (equal to 50% of the clock period - refer to Figure 6) masks
the adaptive turn-off mechanism in order to avoid an undesired turn-off due to the drain-
source voltage drop, consequent to the MOSFET switch-on (the flowing current passes from
the body diode to MOSFET channel resistance) or due to the ringing generated at the
MOSFET turn-on.
During the startup and on the low consumption mode exiting, the control circuit turns off the
SR MOSFET at 50% of the clock cycle and progressively adapts this delay in order to
maximize the SR MOSFET conduction time. This helps reducing system perturbations.



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