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SRK2001ATR Datasheet(PDF) 12 Page - STMicroelectronics |
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SRK2001ATR Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 20 page ![]() Operation description SRK2001A 12/20 DocID029495 Rev 1 7.3 Adaptive turn-off The SR MOSFET turn-off may be triggered by two different mechanisms: by the adaptive turn-off mechanism (two-slope turn-off) or by the ZCD_OFF comparator (fast turn-off, see Section 7.4). Due to the stray inductance in series with the SR MOSFET RDS(on) (mainly the package stray inductance), the sensed drain-source signal is not really equal to the voltage drop across the MOSFET RDS(on), but it anticipates the time instant where the current reaches zero, causing a premature MOSFET turn-off. To overcome this problem (without adding any stray inductance compensation circuit), the device uses a turn-off mechanism based on an adaptive algorithm. This consists in turning off the SR MOSFET with a certain delay after the sensed drain-source voltage has reached zero and adapting progressively this delay in order to maximize the conduction period and get the target residual conduction (Tdiode) of the MOSFET body diode after the turn-off. Figure 8 shows this adaptive algorithm: cycle-by-cycle the conduction time is maximized allowing in a steady-state the maximum converter efficiency. Figure 8. Adaptive turn-off After the turn-on, a blanking time (equal to 50% of the clock period - refer to Figure 6) masks the adaptive turn-off mechanism in order to avoid an undesired turn-off due to the drain- source voltage drop, consequent to the MOSFET switch-on (the flowing current passes from the body diode to MOSFET channel resistance) or due to the ringing generated at the MOSFET turn-on. During the startup and on the low consumption mode exiting, the control circuit turns off the SR MOSFET at 50% of the clock cycle and progressively adapts this delay in order to maximize the SR MOSFET conduction time. This helps reducing system perturbations. |
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