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STM32F358XC Datasheet(PDF) 57 Page - STMicroelectronics |
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STM32F358XC Datasheet(HTML) 57 Page - STMicroelectronics |
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57 / 134 page ![]() DocID025540 Rev 4 57/134 STM32F358xC Electrical characteristics 118 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 25 are derived from tests performed under the ambient temperature condition summarized in Table 24. 6.3.3 Embedded reference voltage The parameters given in Table 26 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 24. Table 25. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 20 ∞ Table 26. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V –40 °C < TA < +85 °C 1.16 1.2 1.24(1) 1. Data based on characterization results, not tested in production. V TS_vrefint ADC sampling time when reading the internal reference voltage -2.2 - - µs VRERINT Internal reference voltage spread over the temperature range VDD = 1.8 V ±10 mV - - 10(2) 2. Guaranteed by design, not tested in production. mV TCoeff Temperature coefficient - - - 100(2) ppm/°C TREFINT_RDY(3) 3. Guaranteed by design, not tested in production. Latency between the time when pin NPOR is set to 1 by the application and the time when VREFINTRDYF is set to 1 by the hardware. Internal reference voltage temporization -1.5 2.5 4.5 ms Table 27. Internal reference voltage calibration values Calibration value name Description Memory address VREFINT_CAL Raw data acquired at temperature of 30 °C VDDA= 3.3 V 0x1FFF F7BA - 0x1FFF F7BB |
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