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STM32F410RB Datasheet(PDF) 78 Page - STMicroelectronics |
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STM32F410RB Datasheet(HTML) 78 Page - STMicroelectronics |
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78 / 142 page ![]() Electrical characteristics STM32F410x8/B 78/142 DocID028094 Rev 5 6.3.8 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 55. However, the recommended clock input waveform is shown in Figure 19. The characteristics given in Table 38 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 15. Table 37. Low-power mode wakeup timings(1) Symbol Parameter Conditions Min Typ Max Unit tWUSLEEP(2) Wakeup from Sleep mode -- 4 6 CPU clock cycles tWUSLEEPFDSM(2) Flash memory in Deep power down mode - - 40,0 µs tWUSTOP(2) Wakeup from Stop mode, code execution from Flash memory Main regulator - 12.9 15.0 Main regulator, Flash memory in Deep power down mode - 104.9 115.0 Regulator in low-power mode(3) - 20.8 25.0 Regulator in low-power mode, Flash memory in Deep power down mode - 112.9 120.0 Wakeup from Stop mode, code execution from RAM Main regulator, Flash memory in Stop or Deep power down mode -4.9 7.0 Regulator in low-power mode, Flash memory in Stop or Deep power down mode(3) - 12.8 20.0 tWUSTDBY(2)(4) Wakeup from Standby mode - - 316.8 350.0 tWUFLASH Wakeup of Flash memory From Flash_Stop mode - - 10.0 Wakeup of Flash memory From Flash Deep power down mode - - 40.0 1. Guaranteed by characterization. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction. 3. The specification is valid for wakeup from regulator in low power mode or in low power low voltage mode, since the timing difference is negligible. 4. tWUSTDBY maximum value is given at - 40 °C. |
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