STM32L063C8 datasheet(79/121 Pages) STMICROELECTRONICS

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STM32L063x8

Electrical characteristics

107

6.3.9

Memory characteristics

RAM memory

Flash memory and data EEPROM

Table 50. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware

registers (only in Stop mode).

STOP mode (or RESET)

1.65

Table 51. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design.

Unit

VDD

Operating voltage

Read / Write / Erase

-1.65

3.6

tprog

Programming time for

word or half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA25 °C, VDD = 3.6 V

500

700

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

Table 52. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

NCYC(2)

Cycling (erase / write)



Program memory

TA-40°C to 105 °C

kcycles

Cycling (erase / write)



EEPROM data memory

100

Cycling (erase / write)



Program memory

TA-40°C to 125 °C

0.2

Cycling (erase / write)



EEPROM data memory

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