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AS4C64M8D1 Datasheet(PDF) 13 Page - Alliance Semiconductor Corporation

Part # AS4C64M8D1
Description  Fully synchronous operation
PDF  64 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M8D1 Datasheet(HTML) 13 Page - Alliance Semiconductor Corporation

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AS4C64M8D1
Confidential
12
Rev.
2.0
Oct. /2014
Table 16. Electrical Characteristics and Recommended A.C.Operating Condition
(VDD = 2.5V ± 0.2V, TA = 0 ~ 70
C)
Symbol
Parameter
-5
Unit Note
Min.
Max.
tCK
Clock cycle time
CL = 2
7.5
12
ns
CL = 2.5
6
12
ns
CL = 3
5
12
ns
tCH
Clock high level width
0.45
0.55
tCK
tCL
Clock low level width
0.45
0.55
tCK
tHP
Clock half period
tCLMIN or
tCHMIN
-
ns
2
tHZ
Data-out-high impedance time from CK, CK
-
0.7
ns
3
tLZ
Data-out-low impedance time from CK, CK
-0.7
0.7
ns
3
tDQSCK
DQS-out access time from CK, CK
-0.6
0.6
ns
tAC
Output access time from CK, CK
-0.7
0.7
ns
tDQSQ
DQS-DQ Skew
-
0.4
ns
tRPRE
Read preamble
0.9
1.1
tCK
tRPST
Read postamble
0.4
0.6
tCK
tDQSS
CK to valid DQS-in
0.72
1.25
tCK
tWPRES
DQS-in setup time
0
-
ns
4
tWPRE
DQS Write preamble
0.25
-
tCK
tWPST
DQS write postamble
0.4
0.6
tCK
5
tDQSH
DQS in high level pulse width
0.35
-
tCK
tDQSL
DQS in low level pulse width
0.35
-
tCK
tIS
Address and Control input setup time
0.7
-
ns
6
tIH
Address and Control input hold time
0.7
-
ns
6
tDS
DQ & DM setup time to DQS
0.4
-
ns
tDH
DQ & DM hold time to DQS
0.4
-
ns
tQH
DQ/DQS output hold time from DQS
tHP - tQHS
-
ns
tRC
Row cycle time
55
-
ns
tRFC
Refresh row cycle time
70
-
ns
tRAS
Row active time
40
70K
ns
tRCD
Active to Read or Write delay
15
-
ns
tRP
Row precharge time
15
-
ns
tRRD
Row active to Row active delay
10
-
ns
tWR
Write recovery time
15
-
ns
tWTR
Internal Write to Read Command Delay
2
-
tCK
tMRD
Mode register set cycle time
10
-
ns
tREFI
Average Periodic Refresh interval
-
7.8
s
7
tXSRD
Self refresh exit to read command delay
200
-
tCK
tXSNR
Self refresh exit to non-read command delay
75
-
ns
tDAL
Auto Precharge write recovery + precharge time
tWR+tRP
-
ns
tDIPW
DQ and DM input pulse width
1.75
-
ns
tIPW
Control and Address input pulse width
2.2
-
ns
tQHS
Data Hold Skew Factor
-
0.5
ns
tDSS
DQS falling edge to CK setup time
0.2
-
tCK
tDSH
DQS falling edge hold time from CK
0.2
-
tCK



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