FMP06N20D datasheet(2/2 Pages) FCI

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250uA

Drain-Source On-State Resistance

RDS(on)

VGS = 2.5V, ID = 5.2A

Drain-Source On-State Resistance

RDS(on)

VGS = 4.5V, ID = 6A

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = 250uA

0.6

Zero Gate Voltage Drain Current

IDSS

VDS = 20V, VGS = 0V

Gate Body Leakage

IGSS

VGS = +12V, VDS = 0V

+ 100

Gate Resistance

Forward Transconductance

gfs

VDS = 10V, ID = 6A

Dynamic

Total Gate Charge

4.86

Gate-Source Charge

Qgs

0.92

Gate-Drain Charge

Qgd

1.4

Turn-On Delay Time

td(on)

8.1

Turn-On Rise Time

9.95

Turn-Off Delay Time

td(off)

21.85

Turn-Off Fall Time

5.35

Input Capacitance

Ciss

562

Output Capacitance

Coss

106

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Max. Diode Forward Current

1.7

Diode Forward Voltage

VSD

IS = 1.7A, VGS = 0V

1.2

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

August '05 Rev 2

VDS = 8V, VGS = 0V

f = 1.0 MHz

VDD = 10V,

D = 1Α, VGEN = 4.5V

RG = 6Ω

VDS = 10V, ID = 6A

VGS = 4.5V

FMP06N20D Dual Die 20V N-Channel Enhancement-Mode Mosfet

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