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FMP06N20D Datasheet(PDF) 1 Page - First Components International |
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FMP06N20D Datasheet(HTML) 1 Page - First Components International |
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1 / 2 page ![]() VDS= 20V, ID=6A RDS(ON), Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 28mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion battery pack applications Maximum Ratings and Thermal Characteristics (T A = 25 oC unless otherwise noted) Symbol Limit Unit VDS 20 VGS + 12 ID 6 IDM 30 TA = 25 oC 2.0 TA = 75 oC 1.3 TJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 62.5 oC/W Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board August '05 Rev 2 1 N-Channel MOSFET W Drain-Source Voltage PD Pulsed Drain Current Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation Parameter V A Top View Internal Schematic Diagram TSOP-6 Gate1 Drain1 Source1 1) 2) 2 Gate2 Drain2 Source2 FMP06N20D Dual Die 20V N-Channel Enhancement-Mode Mosfet |
Similar Part No. - FMP06N20D |
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Similar Description - FMP06N20D |
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