Elektronische Bauelemente

SDT2P02

Ω

Ω

Ω

Dual-P Enhancement Mode MOSFET

12-Aug-2017 Rev. D

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

-20

-

-

V

Gate-Threshold Voltage

-0.5

-

-1

V

Forward Transconductance

-

3.4

-

S

Gate-Body Leakage Current

-

-

±100

nA

-

-

-1

Zero Gate Voltage Drain Current

-

-

-10

µA

-

170

200

Drain-Source On-Resistance

3

-

240

280

m

Total Gate Charge

3

-

4.6

-

Gate-Source Charge

-

0.27

-

Gate-Drain Charge

-

2.34

-

nC

Turn-On Delay Time

3

-

11.6

-

Rise Time

-

6.2

-

Turn-Off Delay Time

-

31.8

-

Fall Time

-

2.8

-

nS

Input Capacitance

-

194

-

Output Capacitance

-

35.5

-

Reverse Transfer Capacitance

-

28.2

-

pF

f=1MHz

Source-Drain Diode Characteristics

Diode Forward Voltage

3

-

-0.85

-1.3

V

Continuous Source Current

1

-

-

-2.2

mA

Pulsed Source Current

3

-

-

-8.8

mA

Notes:

1.

The surface of the device is mounted on a 1” x 1” FR4 board with 2OZ copper.

2.

Pulse width is limited by the maximum junction temperature.

3.

Pulse test: Pulse width≦300µs, duty cycle≦2%.