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T330P Datasheet(PDF) 1 Page - Vishay Siliconix

Part # T330P
Description  Silicon PIN Photodiode
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

T330P Datasheet(HTML) 1 Page - Vishay Siliconix

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T330P
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 22-May-14
1
Document Number: 83490
For technical questions, contact: optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
T330P chip is a PIN photodiode with 0.23 mm2 sensitive
area, high speed and high photo sensitivity. It is sensitive to
the visible and near infrared light spectrum with a peak
sensitivity at 900 nm. Anode is the bond pad on top,
cathode is the backside contact.
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 0.67 x 0.67 x 0.28
• Wafer diameter (in mm): 100
• Radiant sensitive area (in mm2): 0.23
• Peak sensitivity wavelength: 900 nm
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible light and near infrared radiation
• Fast response times
• Angle of half sensitivity:
ϕ = ± 60°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.1 (nm)
T330P
2.3
± 60
430 to 1100
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
T330P-SD-F
Wafer sawn on foil with disco frame
MOQ: 55 000 pcs
Chip
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
60
V
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg1
-40 to +100
°C
Storage temperature range on foil
Tstg2
-40 to +50
°C


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