© 2002 IXYS All rights reserved

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CoolMOS Power MOSFET

with Series Schottky Diode and

Ultra Fast Antiparallel Diode

IXKF 40N60SCD1

Features

• fast CoolMOS power MOSFET - 2nd

generation

- High blocking voltage

- Low on resistance

- Low thermal resistance due to reduced

chip thickness

• Series Schottky diode prevents current

flow through MOSFET’s body diode

- very low forward voltage

- fast switching

- low operating forward voltage

- fast and soft reverse recovery - low switching

losses

- isolated back surface

- low coupling capacity between pins and

heatsink

- enlarged creepage towards heatsink

- enlarged creepage between high voltage

pins

- application friendly pinout

- high reliability

- industry standard outline

Applications

Converters with

• circuit operation leading to current flow

through switches in reverse direction - e. g.

- phaseleg with inductive load

- resonant circuits

• high switching frequency

Examples

• switched mode power supplies (SMPS)

• uninterruptable power supplies (UPS)

• DC-DC converters

• welding converters

• converters for inductive heating

• drive converters

CoolMOS is a trademark of

Infineon Technologies AG.

Advanced Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

I

D25

= 38 A

V

DSS

= 600 V

R

DSon

= 60 m

Ω

Ω

Ω

Ω

Ω

t

rr

= 70 ns

MOSFET T

Symbol

Conditions

Maximum Ratings

V

DSS

T

600

V

V

GS

±20

V

I

D25

T

38

A

I

D90

T

25

A

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

R

DSon

V

60

70 m

Ω

V

GSth

V

3.5

5.5

V

I

DSS

V

25°C

0.3 mA

T

0.5

mA

I

GSS

V

100

nA

Q

g

220

nC

Q

gs

55

nC

Q

gd

125

nC

t

d(on)

30

ns

t

r

95

ns

t

d(off)

100

ns

t

f

10

ns

R

thJC

0.45 K/W

R

thJH

with heat

transfer paste

0.9

K/W

V

V

I