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JCS9N50F Datasheet(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS9N50F
Description  N-CHANNEL MOSFET
PDF  10 Pages
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Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS9N50F Datasheet(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS9N50F
版本：201604C
3/10
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符
号
Symbol
测试条件
Tests conditions
最小
Min
典型
Typ
最大
Max
单位
Units
关态特性 Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BV
B
DSSB
I
B
DB=250μA, VBGSB=0V
500
-
-
V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBV
B
DSSB/Δ
T
B
JB
I
B
DB=250μA,
referenced to
25℃
-
0.55
-
V/℃
V
B
DSB=500V,VBGSB=0V,
T
B
CB=25℃
-
-
10
μA
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
I
B
DSSB
V
B
DSB=400V,
T
B
CB=125℃
-
-
100
μA
正向栅极体漏电流
Gate-body leakage current,
forward
I
B
GSSFB
V
B
DSB=0V,
V
B
GSB =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
I
B
GSSRB
V
B
DSB=0V,
V
B
GSB =-30V
-
-
-100
nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
V
B
GS(th)B
V
B
DSB = VBGSB ,
I
B
DB=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
R
B
DS(ON)B
V
B
GSB =10V ,
I
B
DB=4.0A
-
0.65 0.8
Ω
正向跨导
Forward Transconductance
g
B
fsB
V
B
DSB = 40V, IBDB=4.0A（note
4）
-
7.3
-
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
C
B
issB
-
1400 1800
pF
输出电容
Output capacitance
C
B
ossB
-
145 190
pF
反向传输电容
Reverse transfer capacitance
C
B
rssB
V
B
DSB=25V,
V
B
GSB =0V,
f=1.0MH
B
ZB
-
35
45
pF



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