Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

JCS9N50F Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS9N50F
Description  N-CHANNEL MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS9N50F Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  JCS9N50F Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 7Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 8Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS9N50F Datasheet HTML 9Page - JILIN SINO-MICROELECTRONICS CO., LTD. Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 10 page
background image
R
JCS9N50F
版本：201604C
4/10
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
t
B
dB(on)
-
22
55
ns
上升时间 Turn-On rise time
t
B
rB
-
65 140
ns
延迟时间 Turn-Off delay time
t
B
dB(off)
-
125 260
ns
下降时间 Turn-Off Fall time
t
B
fB
V
B
DDB=250V,IBDB=8.0A,RBGB=25
Ω
（note 4，5）
-
75 160
ns
栅极电荷总量 Total Gate Charge
Q
B
gB
-
59
70
nC
栅－源电荷 Gate-Source charge
Q
B
gsB
-
6.5
-
nC
栅－漏电荷 Gate-Drain charge
Q
B
gdB
V
B
DSB =400V ,
I
B
DB=8.0A
V
B
GSB =10V
（note 4，5）
-
28
-
nC
漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
I
B
SB
-
-
8.0
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
I
B
SMB
-
-
32
A
正向压降
Drain-Source Diode Forward
Voltage
V
B
SDB
V
B
GSB=0V,
I
B
SB=8.0A
-
-
1.4
V
反向恢复时间
Reverse recovery time
t
B
rrB
-
390
-
ns
反向恢复电荷
Reverse recovery charge
Q
B
rrBBB
V
B
GSB=0V,
I
B
SB=8.0A
dI
B
FB/dt=100A/μs
(note 4)
-
4.2
-
μC
热特性 THERMAL CHARACTERISTIC
最大
Max
项
目
Parameter
符
号
Symbol
JCS9N50F
(TO-220MF)
JCS9N50F
(TO-220MF-K1)
单
位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.36
2.59
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
35.2
42.3
℃/W
注释：
1：脉冲宽度由最高结温限制
2：L=9.0mH, I
B
ASB=8.0A, VBDDB=50V,
R
B
GB=25 Ω,起始
结温T
B
JB=25℃
3：I
B
SDB ≤8.0A,di/dt ≤200A/μs,VDD≤BVBDSSB,起始结温
T
B
JB=25℃
4：脉冲测试：脉冲宽度≤300μs,占空比≤2％
5：基本与工作温度无关
Notes:
1 ： Pulse
width
limited
by
maximum
junction
temperature
2：L=9.0mH, I
B
ASB=8.0A, VBDDB=50V, RBGB=25 Ω,Starting
T
B
JB=25℃
3 ： I
B
SDB
≤8.0A,di/dt ≤200A/μs,VDD≤BV
B
DSSB,
Starting
T
B
JB=25℃
4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％
5：Essentially independent of operating temperature



Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com