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AP9962M Datasheet(PDF) 1 Page - Advanced Power Technology |
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AP9962M Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low On-resistance BVDSS 40V ▼ ▼ ▼ ▼ Single Drive Requirement RDS(ON) 25mΩ ▼ ▼ ▼ ▼ Surface Mount Package ID 7A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Continuous Drain Current 3, V GS @ 10V 5.5 Pulsed Drain Current 1,2 20 Gate-Source Voltage Continuous Drain Current 3, V GS @ 10V 7 Parameter Rating Drain-Source Voltage 40 200407031 AP9962M The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ±20 S1 G1 S2 G2 D1 D1 D2 D2 SO-8 G2 D2 S2 G1 D1 S1 |
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