AP9962M datasheet(2/4 Pages) ADPOW

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Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.1

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=7A

mΩ

VGS=4.5V, ID=5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=7A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=40V, VGS=0V

Drain-Source Leakage Current (Tj=70

oC)

VDS=32V ,VGS=0V

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=7A

25.8

Qgs

Gate-Source Charge

VDS=32V

4.4

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

9.1

td(on)

Turn-on Delay Time

VDS=20V

10.6

Rise Time

ID=1A

6.8

td(off)

Turn-off Delay Time

RG=5.7Ω,VGS=10V

26.3

Fall Time

RD=20Ω

-12

Ciss

Input Capacitance

VGS=0V

1165

Coss

Output Capacitance

VDS=25V

205

Crss

Reverse Transfer Capacitance

f=1.0MHz

142

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=1.7A, VGS=0V

1.2

trr

Reverse Recovery Time

Is=1.7A,

VGS=0V,

21.2

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.

AP9962M

± 20V

±100

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