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AT908 Datasheet(PDF) 1 Page - Power Semiconductors |
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AT908 Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 4 page ![]() PHASE CONTROL THYRISTOR AT908 Repetitive voltage up to 800 V Mean on-state current 6536 A Surge current 95 kA FINAL SPECIFICATION Feb. 17 - Issue: 6 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 140 800 V V RSM Non-repetitive peak reverse voltage 140 900 V V DRM Repetitive peak off-state voltage 140 800 V I RRM Repetitive peak reverse current V=VRRM 140 300 mA I DRM Repetitive peak off-state current V=VDRM 140 300 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 6536 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 5553 A I TSM Surge on-state current sine wave, 10 ms 140 95,0 kA I² t I² t VR=50%VRRM 45125 x1E3 A²s V T On-state voltage On-state current = 9000 A 25 1,26 V V T(TO) Threshold voltage 140 0,85 V r T On-state slope resistance 140 0,05 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM, gate 10V 5ohm 140 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 140 1000 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=5 µs 25 . µs tq Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 500 µs Q RR Reverse recovery charge di/dt=-20 A/µs, I= 4000 A 140 . µC I RR Peak reverse recovery current VR= 50 V . A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=30µs 25 3000 mA GATE V GT Gate trigger voltage VD=12V 25 3,5 V I GT Gate trigger current VD=12V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 140 0,4 V V FGM Peak gate voltage (forward) 10 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 3 W MOUNTING R th(j-c) Thermal impedance, DC Junction to case, double side cooled 6,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 1,5 °C/kW T j Operating junction temperature -30 / 140 °C F Mounting force 80.0 / 100.0 kN Mass 3000 g ORDERING INFORMATION : AT908 S 08 standard specification VDRM&VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com Page 1 of 4 |
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