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AT908 Datasheet(PDF) 1 Page - Power Semiconductors

Part # AT908
Description  PHASE CONTROL THYRISTOR
PDF  4 Pages
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Manufacturer  POSEICO [Power Semiconductors]
Direct Link  http://www.poseico.com
Logo POSEICO - Power Semiconductors

AT908 Datasheet(HTML) 1 Page - Power Semiconductors

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PHASE CONTROL THYRISTOR
AT908
Repetitive voltage up to
800 V
Mean on-state current
6536 A
Surge current
95
kA
FINAL SPECIFICATION
Feb. 17 - Issue: 6
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
140
800
V
V RSM
Non-repetitive peak reverse voltage
140
900
V
V DRM
Repetitive peak off-state voltage
140
800
V
I RRM
Repetitive peak reverse current
V=VRRM
140
300
mA
I DRM
Repetitive peak off-state current
V=VDRM
140
300
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
6536
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
5553
A
I TSM
Surge on-state current
sine wave, 10 ms
140
95,0
kA
I² t
I² t
VR=50%VRRM
45125 x1E3
A²s
V T
On-state voltage
On-state current =
9000 A
25
1,26
V
V T(TO)
Threshold voltage
140
0,85
V
r T
On-state slope resistance
140
0,05
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM, gate 10V 5ohm
140
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
140
1000
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=5 µs
25
.
µs
tq
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 75% VDRM
500
µs
Q RR
Reverse recovery charge
di/dt=-20 A/µs, I= 4000 A
140 .
µC
I RR
Peak reverse recovery current
VR= 50 V
.
A
I H
Holding current, typical
VD=5V, gate open circuit
25
500
mA
I L
Latching current, typical
VD=12V, tp=30µs
25
3000
mA
GATE
V GT
Gate trigger voltage
VD=12V
25
3,5
V
I GT
Gate trigger current
VD=12V
25
400
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
140
0,4
V
V FGM
Peak gate voltage (forward)
10
V
I FGM
Peak gate current
10
A
V RGM
Peak gate voltage (reverse)
10
V
P GM
Peak gate power dissipation
Pulse width 100 µs
150
W
P G
Average gate power dissipation
3
W
MOUNTING
R th(j-c)
Thermal impedance, DC
Junction to case, double side cooled
6,0
°C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
1,5
°C/kW
T j
Operating junction temperature
-30 / 140
°C
F
Mounting force
80.0 / 100.0
kN
Mass
3000
g
ORDERING INFORMATION : AT908 S 08
standard specification
VDRM&VRRM/100
POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com
Page 1 of 4


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