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H5N3003P Datasheet(PDF) 6 Page - Renesas Technology Corp |
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H5N3003P Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 10 page ![]() H5N3003P Rev.2.00, Aug.01.2003, page 6 of 9 Drain Current ID (A) Switching Characteristics Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 20 40 60 80 100 20000 50000 10000 1000 2000 5000 500 400 300 200 100 0 20 16 12 8 4 40 80 120 160 200 0 10000 1000 10 100 0.1 0.3 1 3 10 30 100 200 500 100 50 V = 50 V 100 V 240 V DS V = 0 f = 1 MHz GS Ciss Coss Crss I = 40 A D VDD VGS Body-Drain Diode Reverse Recovery Time di / dt = 100 A / µs V = 0, Ta = 25 °C GS V = 240 V 100 V 50 V DS r t d(on) t d(off) t t f V = 10 V, V = 150 V PW = 10 µs, duty < 1 % R =10 Ω GS DD G r t Reverse Drain Current IDR (A) Gate Charge Qg (nC) Dynamic Input Characteristics t f |
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