H5N3003P datasheet(3/10 Pages) RENESAS

3 / 10 page

H5N3003P

Rev.2.00, Aug.01.2003, page 3 of 9

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

300

—

ID = 10mA, VGS = 0

Zero gate voltage drain current

IDSS

——1

µAVDS = 300V, VGS = 0

Gate to source leak current

IGSS

——±0.1

µAVGS = ±30V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.0

VDS = 10V, ID = 1mA

Forward transfer admittance

|yfs|

2035—

ID = 20A, VDS = 10V

Note4

Static drain to source on state

resistance

RDS(on)

—

0.058

0. 069

Ω

ID = 20A, VGS= 10V

Note4

Input capacitance

Ciss

—

5150

—

VDS = 25V

Output capacitance

Coss

—

560

—

VGS = 0

Reverse transfer capacitance

Crss

—

f = 1MHz

Turn-on delay time

td(on)

—

ID= 20A

Rise time

—

185

—

RL = 7.5

Ω

Turn-off delay time

td(off)

—

220

—

VGS = 10V

Fall time

—

150

—

Rg=10

Ω

Total gate charge

—

130

—

VDD = 240V

Gate to source charge

Qgs

—

VGS = 10V

Gate to drain charge

Qgd

—

ID = 40A

Body–drain diode forward voltage

VDF

—1.0

1.5

IF = 40A, VGS = 0

Body–drain diode reverse recovery

time

trr

—

280

—

IF = 40A, VGS = 0

diF/dt=100A/

µs

Body–drain diode reverse recovery

charge

Qrr

—

2.5

—

µC

Notes: 4. Pulse test

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