TSM033NA04LCR datasheet(2/6 Pages) TSC

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TSM033NA04LCR

Taiwan Semiconductor

Version: B1611

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

Gate Threshold Voltage

VGS = VDS, ID = 250µA

VGS(TH)

1.2

1.7

2.5

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

IGSS

±100

Drain-Source Leakage Current

VGS = 0V, VDS = 40V

IDSS

µA

VGS = 0V, VDS = 40V

TJ = 125°C

100

Drain-Source On-State Resistance

(Note 3)

VGS = 10V, ID = 20A

RDS(on)

2.3

3.3

VGS = 4.5V, ID = 20A

3.3

4.4

Forward Transconductance

(Note 3)

VDS = 5V, ID = 20A

gfs

Dynamic

(Note 4)

Total Gate Charge

VGS = 10V, VDS = 20V,

ID = 20A

Total Gate Charge

VGS = 4.5V, VDS = 20V,

ID = 20A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VGS = 0V, VDS = 20V

f = 1.0MHz

Ciss

3130

Output Capacitance

Coss

670

Reverse Transfer Capacitance

Crss

137

Gate Resistance

f = 1.0MHz

0.5

1.7

3.4

Switching

(Note 4)

Turn-On Delay Time

VGS = 10V, VDS = 20V,

ID = 13A, RG = 10Ω,

td(on)

25.1

Turn-On Rise Time

15.2

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

11.8

Source-Drain Diode

Forward Voltage

(Note 3)

VGS = 0V, IS = 20A

VSD

1.2

Reverse Recovery Time

IS = 20A ,

dI/dt = 100A/

μs

trr

Reverse Recovery Charge

Qrr

Notes:

Silicon limited current only.

L = 0.3mH, VGS = 10V, VDS = 30V, RG = 25Ω, IAS = 44A, Starting TJ = 25°C

Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM033NA04LCR RLG

PDFN56

2,500pcs / 13

” Reel

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