Description:

The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz.

Features:

• Specified 12.5V, 30MHz Characteristics:

   Output Power = 100W (PEP)

   Minimum Gain = 10dB

   Efficiency = 40%

• Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR